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  • Device Physics and Applications
    Byung-Eun Park; Hiroshi Ishiwara; Masanori Okuyama; Shigeki Sakai; Sung-Min Yoon
    978-94-024-0841-6
    2016
    Edition 1
    • Describes the development history, materials, fabrication methodologies, technical challenges and promising applications of FET-type ferroelectric memory devices
    • Presents a comprehensive review of past, present, and future technologies for the FET-type ferroelectric memories
    • Offers a useful source of information for graduate students of material science and electronic engineering, and device and process engineers in industry
    • Includes supplementary material: sn.pub/extras

    €220

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