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  • Changhwan Shin
    978-94-017-7597-7
    2016
    Edition 1
    • Offers an insightful overview of the key techniques in variation-immune CMOS device designs
    • Covers the main contemporary issues in CMOS device design, such as how to overcome process-induced random variations including line-edge-roughness, random-dopant-fluctuation, and work-function variation
    • Describes the applications of novel CMOS devices to static random access memory (SRAM)
    • Includes supplementary material: sn.pub/extras

    €100

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