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Changhwan Shin978-94-017-7597-72016 Edition 1- Offers an insightful overview of the key techniques in variation-immune CMOS device designs
- Covers the main contemporary issues in CMOS device design, such as how to overcome process-induced random variations including line-edge-roughness, random-dopant-fluctuation, and work-function variation
- Describes the applications of novel CMOS devices to static random access memory (SRAM)
- Includes supplementary material: sn.pub/extras
€100 €9010% OFF