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Extended Defects in Germanium

Fundamental and Technological Aspects

Cor Claeys; Eddy Simoen

978-3-540-85614-6

2009
Edition 1
- Deals with all aspects of defects in Ge, an element which is gaining importance again in semiconductor technology
- Discusses all kinds of expanded defects in Ge, such as dislocation, stacking faults, twins, grain boundaries and bubbles on a crystallographic basis
- Systematically presentation of defects creation and its influence on device properties
- Appeals mainly to researchers and engineers but is also suitable for graduate students working in this field
- Includes supplementary material: sn.pub/extras
€280 €252
10% OFF

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