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  • Jianyong Ouyang
    978-3-319-31572-0
    2016
    Edition 1
    • Details how charge trapping can occur on nanoparticles and at interface between bulk metal and metal nanoparticles
    • Explains how charge transfer can lead to resistive switches
    • Demonstrates how conductive filaments are formed and cause resistive switches
    • Describe how devices with resistive switches can be used as memory devices
    • Provides a comprehensive overview of nanoparticles, donor-acceptor materials, oxides, one- and two-dimensional nanomaterials for the fabrication and characterization of memory devices and mechanisms for resistive switches

    €100

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