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  • J.-P. Colinge
    978-0-387-71752-4
    2008
    Edition 1
    • Explains the physics and properties of MuGFET devices, how they are made and how circuit designers can use them to improve the performances of integrated circuits
    • Covers the emergence of quantum effects and novel electrical transport phenomena due to the reduced size of the devices
    • Describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs
    • Presents descriptions of the technological challenges and options, including a physically based compact model

    €400

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